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2SA1900U PDF预览

2SA1900U

更新时间: 2024-11-25 14:53:59
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 251K
描述
功率三极管

2SA1900U 数据手册

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2SA1900U  
PNP Silicon Epitaxial Planar Power Transistor  
Medium power transistor  
Features  
• Low Collector Emitter Saturation Voltage  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
60  
50  
5
V
V
Collector Current  
1
A
Collector Current (Pw = 20 ms)  
-ICP  
2
A
0.5 1)  
PC  
W
Collector Power Dissipation  
2 2)  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
Unit  
250 1)  
Thermal Resistance from Junction to Ambient  
/W  
62.5 2)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
2) When mounted on a 40 x 40 x 0.7 mm ceramic board.  
®
Dated: 30/05/2023 Rev: 05  
1 / 5  

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