生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.52 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 300 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 6 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 180 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1897K-T-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-126VAR | |
2SA1897L | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN | |
2SA1897L-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-126VAR | |
2SA1897-L-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1897L-T-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-126VAR | |
2SA1898 | KEXIN |
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PNP Epitaxial Planar Silicon | |
2SA1898 | TYSEMI |
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Adoption of FBET and MBIT processes. Large current capacity. | |
2SA1898 | SANYO |
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DC/DC Converter | |
2SA1898_15 | KEXIN |
获取价格 |
PNP Transistors | |
2SA1898R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 600MA I(C) | SOT-89 |