Datasheet > 2SA1891_06

2SA1891_06

更新时间： 2024-11-24 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
5页	151K
描述
Power Amplifier Applications Power Switching Applications

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2SA1891_06 数据手册

2SA1891

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1891

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low collector-emitter saturation voltage: V

= −0.5 V (max)

CE (sat)

(I = −1 A)

•

High collector power dissipation: P = 1.3 W (Ta = 25 °C)

High-speed switching time: t

Complementary to 2SC5028

= 300 ns (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

−50

Collector-emitter voltage

Emitter-base voltage

−6

−2

Collector current

JEDEC

JEITA

―

Pulse

−4

Base current

−0.2

1.3

Collector power dissipation

Junction temperature

°C

TOSHIBA

2-8M1A

150

Weight: 0.55 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

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