2SA1892-O

更新时间： 2024-01-29 02:33:34

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关放大器晶体管功率双极晶体管电源开关功率放大器
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数据手册

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2SA1892-O 数据手册

2SA1892

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1892

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low collector-emitter saturation voltage: V

= −0.5 V (max)

CE (sat)

(I = −1 A, I = −0.05 A)

•

High collector power dissipation: P = 1.3 W

High-speed switching time: t

Complementary to 2SC5029

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−3

JEDEC

JEITA

―

Base current

−0.2

1.3

Collector power dissipation

Junction temperature

Storage temperature range

°C

150

TOSHIBA

2-8M1A

stg

−55 to 150

Weight: 0.55 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

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2SA1893-O	TOSHIBA	获取价格	暂无描述
2SA1893Y	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-221
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2SA1897	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN
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