是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1812P | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89 |
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2SA1812Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89 |
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2SA1812T100/N | ROHM |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SA1812T100/NP | ROHM |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SA1812T100/NQ | ROHM |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SA1812T100/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SA1812T100N | ROHM |
获取价格 |
500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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2SA1812T100P | ROHM |
获取价格 |
500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, 3 PIN |
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2SA1812T100Q | ROHM |
获取价格 |
Si, SMALL SIGNAL TRANSISTOR |
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2SA1812T101 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, |
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