生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.54 |
最大集电极电流 (IC): | 0.15 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 500 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 0.25 W | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 210 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1815 | SANYO |
获取价格 |
FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications | |
2SA1815 | KEXIN |
获取价格 |
PNP Epitaxial Planar Silicon Transistors | |
2SA1815 | TYSEMI |
获取价格 |
High power gain:PG=25dB typ(f=100MHz) High power gain:PG=25dB typ(f=100MHz) | |
2SA18153 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-236 | |
2SA1815-3 | KEXIN |
获取价格 |
PNP Transistors | |
2SA18154 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-236 | |
2SA1815-4 | ONSEMI |
获取价格 |
TRANSISTOR,BJT,PNP,15V V(BR)CEO,50MA I(C),TO-236 | |
2SA18155 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-236 | |
2SA1815-HF | KEXIN |
获取价格 |
PNP Transistors | |
2SA1815-HF-3 | KEXIN |
获取价格 |
PNP Transistors |