Datasheet > 2SA1815

2SA1815

更新时间： 2024-09-25 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
PNP Epitaxial Planar Silicon Transistors

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中文翻译

获取价格

数据手册

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2SA1815 数据手册

SMD Type

TransistIoCrs

PNP Epitaxial Planar Silicon Transistors

2SA1815

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High power gain:PG=25dB typ(f=100MHz)

High cutoffrequency:fT=750MHz typ

Low collector-to-emitter saturation voltage

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-15

-12

-3

-50

Collector dissipation

Jumction temperature

Storage temperature

P^C

250

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Symbol

Testconditons

Min

Typ

Max

-0.1

270

Unit

ìA

Ic^BO

I^EBO

h^FE

VCB = -12V , IE = 0

VEB = -2V , IC = 0

ìA

VCE = -10V , IC = -5mA

V^CE= -10V , IC = -5mA

VCB=-10V,f=1MHz

V^CB=-10V,f=1MHz

IC=-10mA,IB=-1mA

Gain bandwidth product

Output Capacitance

Reverse Transfer Capacitance

C-E Saturation Voltage

Power Gain

750

1.2

0.9

-0.1

MHz

C^ob

1.6

Cob

V^CE(sat)

P^G

-0.3

VCE=-10V,IC=-10mA,f=100MHz

hFE Classification

Marking

Rank

hFE

60 to 120

90 to 180

135 to 270

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