SMD Type
Transistors
PNP Transistors
2SA1815
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High power gain : PG=25dB (f=100MHz).
● High cutoff frequency ; fT=750MHz typ.
1
2
+0.02
-0.02
● Low collector-to-emitter saturation voltage.
● Complementary pair with the 2SC4432.
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-15
Unit
V
VCBO
VCEO
VEBO
-12
-3
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-50
mA
P
C
250
150
mW
T
J
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA, I =0
= -100μA, I
Min
-15
-12
-3
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
I
CBO
EBO
V
V
CB= -12 V , I
E
=0
-100
-100
-0.3
-1.2
270
nA
V
I
EB= -2V , I
=-10mA, I
C=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
C
B
=-1mA
=-1mA
-0.1
V
I
C
=-10mA, I
B
hFE
V
V
V
V
V
CE= -10V, I
CE= -10V, I
CB= -10V, I
CB= -10V, I
CE= -10V, I
C
= -5mA
60
Power Gain
PG
C= -10mA,f=100MHz
25
1.2
0.9
750
dB
pF
Collector output capacitance
Reverse Transfer Capacitance
Transition frequency
Cob
E
= 0,f=1MHz
= 0,f=1MHz
1.6
Cre
E
f
T
C= -5mA
MHz
■ Classification of hfe
Type
2SA1815-JS3
60-120
2SA1815-JS4 2SA1815-JS5
Range
Marking
90-180
JS4
135-270
JS5
JS3
1
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