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2SA1774 PDF预览

2SA1774

更新时间: 2024-11-23 06:19:31
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管
页数 文件大小 规格书
2页 176K
描述
PNP Silicon General Purpose Transistor

2SA1774 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.05
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

2SA1774 数据手册

 浏览型号2SA1774的Datasheet PDF文件第2页 
2SA1774  
PNP Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
FEATURES  
SOT-523  
A
L
Dim  
A
Min  
1.50  
0.78  
0.80  
0.28  
0.90  
0.00  
0.10  
0.35  
0.49  
1.50  
Max  
1.70  
0.82  
0.82  
0.32  
1.10  
0.10  
0.20  
0.41  
0.51  
1.70  
Low Cob.  
Cob=4.0pF  
3
Compements the 2SC4617  
B
S
B
Top View  
2
1
C
D
D
STRUCTURE  
G
H
G
Expitaxial planar type  
PNP Silicon Teansistor  
J
J
C
K
K
H
L
Collector  
3
S
Base  
2
All Dimension in mm  
1
Emitter  
!Absolute maximum (Ta=25°C)  
Parameter  
Symbol  
Limits  
-60  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-50  
V
-6  
V
I
C
-0.15  
A
Collector power dissipation  
P
C
0.15  
W
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55~+150  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
BVCBO  
BVCEO  
BVEBO  
-60  
-50  
-7  
I
I
I
C
=-50µA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C=-1uA  
V
E=-50µA  
I
CBO  
EBO  
FE  
CE(sat)  
-0.1  
-0.1  
560  
-0.5  
µA  
µA  
V
CB=-60V  
I
Emitter cutoff current  
V
EB=-6V  
CE=-6V, I  
/I =-50mA/-5mA  
h
120  
V
C=-1mA  
DC current transfer ratio  
V
V
I
C B  
Collector-emitter saturation voltage  
Transition frequency  
f
T
140  
4.0  
MHz  
pF  
V
CE=-12V, I  
CE=-12V, I  
E
E
=2mA, f=30MHz  
Cob  
5.0  
V
=0A, f=1MHz  
Output capacitance  
hFE values are classified as follows :  
Item  
Q
120~270  
FQ  
R
180~390  
FR  
S
270~560  
FS  
h
FE  
Marking  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

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