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2SA1774/D PDF预览

2SA1774/D

更新时间: 2024-02-25 07:36:08
品牌 Logo 应用领域
其他 - ETC 晶体放大器晶体管
页数 文件大小 规格书
8页 63K
描述
Amplifier Transistor PNP

2SA1774/D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-75A
包装说明:ROHS COMPLIANT, EMT3, SC-75A, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:0.99
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1774/D 数据手册

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ON Semiconductort  
2SA1774  
PNP Silicon General Purpose  
Amplifier Transistor  
This PNP transistor is designed for general purpose amplifier  
applications. This device is housed in the SOT–416/SC–90 package  
which is designed for low power surface mount applications, where  
board space is at a premium.  
PNP GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
Reduces Board Space  
SURFACE MOUNT  
High h , 210–460 (typical)  
FE  
Low V , < 0.5 V  
CE(sat)  
Available in 8 mm, 7–inch/3000 Unit Tape and Reel  
3
2
1
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
–60  
Unit  
Vdc  
CASE 463–01, STYLE 1  
SOT–416/SC–90  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
DEVICE MARKING  
2SA1774 = F9  
V
V
–50  
Vdc  
–6.0  
–100  
Vdc  
COLLECTOR  
3
I
C
mAdc  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
150  
Unit  
mW  
°C  
(1)  
Power Dissipation  
P
D
1
BASE  
2
EMITTER  
Junction Temperature  
T
J
150  
Storage Temperature Range  
T
stg  
–55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Vdc  
Vdc  
Vdc  
nA  
Collector–Base Breakdown Voltage (I = –50 µAdc, I = 0)  
V
V
V
–60  
–50  
–6.0  
C
E
(BR)CBO  
(BR)CEO  
(BR)EBO  
Collector–Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)  
C
B
Emitter–Base Breakdown Voltage (I = –50 µAdc, I = 0)  
E
E
Collector–Base Cutoff Current (V = –30 Vdc, I = 0)  
I
CBO  
–0.5  
–0.5  
CB  
E
Emitter–Base Cutoff Current (V = –5.0 Vdc, I = 0)  
I
EBO  
µA  
EB  
B
(2)  
Collector–Emitter Saturation Voltage  
V
Vdc  
CE(sat)  
(I = –50 mAdc, I = –5.0 mAdc)  
–0.5  
560  
C
B
(2)  
DC Current Gain  
h
FE  
MHz  
pF  
(V = –6.0 Vdc, I = –1.0 mAdc)  
120  
CE  
C
Transition Frequency  
(V = –12 Vdc, I = –2.0 mAdc, f = 30 MHz)  
f
T
140  
3.5  
CE  
C
Output Capacitance (V = –12 Vdc, I = 0 Adc, f = 1 MHz)  
C
CB  
E
OB  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. Pulse Test: Pulse Width 300 µs, D.C. 2%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 3  
2SA1774/D  

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