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2SA1774/D

更新时间： 2024-11-22 23:19:59
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其他 - ETC 晶体放大器晶体管
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8页 63K
描述
Amplifier Transistor PNP

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2SA1774/D 数据手册

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ON Semiconductort  
2SA1774  
PNP Silicon General Purpose  
Amplifier Transistor  
This PNP transistor is designed for general purpose amplifier  
applications. This device is housed in the SOT–416/SC–90 package  
which is designed for low power surface mount applications, where  
board space is at a premium.  
PNP GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
• Reduces Board Space  
SURFACE MOUNT  
• High h , 210–460 (typical)  
FE  
• Low V , < 0.5 V  
CE(sat)  
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel  
3
2
1
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
–60  
Unit  
Vdc  
CASE 463–01, STYLE 1  
SOT–416/SC–90  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
DEVICE MARKING  
2SA1774 = F9  
V
V
–50  
Vdc  
–6.0  
–100  
Vdc  
COLLECTOR  
3
I
C
mAdc  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
150  
Unit  
mW  
°C  
(1)  
Power Dissipation  
P
D
1
BASE  
2
EMITTER  
Junction Temperature  
T
J
150  
Storage Temperature Range  
T
stg  
–55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Typ  
—
Max  
—
Unit  
Vdc  
Vdc  
Vdc  
nA  
Collector–Base Breakdown Voltage (I = –50 µAdc, I = 0)  
V
V
V
–60  
–50  
–6.0  
—
C
E
(BR)CBO  
(BR)CEO  
(BR)EBO  
Collector–Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)  
—
—
C
B
Emitter–Base Breakdown Voltage (I = –50 µAdc, I = 0)  
—
—
E
E
Collector–Base Cutoff Current (V = –30 Vdc, I = 0)  
I
CBO  
—
–0.5  
–0.5  
CB  
E
Emitter–Base Cutoff Current (V = –5.0 Vdc, I = 0)  
I
EBO  
—
—
µA  
EB  
B
(2)  
Collector–Emitter Saturation Voltage  
V
Vdc  
CE(sat)  
(I = –50 mAdc, I = –5.0 mAdc)  
—
—
—
–0.5  
560  
C
B
(2)  
DC Current Gain  
h
FE  
—
MHz  
pF  
(V = –6.0 Vdc, I = –1.0 mAdc)  
120  
CE  
C
Transition Frequency  
(V = –12 Vdc, I = –2.0 mAdc, f = 30 MHz)  
f
T
—
—
140  
3.5  
—
—
CE  
C
Output Capacitance (V = –12 Vdc, I = 0 Adc, f = 1 MHz)  
C
CB  
E
OB  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 3  
2SA1774/D  
12345678

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