Datasheet > 2SA1774EB_09

2SA1774EB_09

更新时间： 2024-11-23 06:19:23

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	162K
描述
General Purpose Transistor (50V, 0.15A)

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中文翻译

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数据手册

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2SA1774EB_09 数据手册

General Purpose Transistor (50V, 0.15A)

2SA1774EB

Applications

Dimensions (Unit : mm)

General purpose small signal amplifier.

EMT3F

Features

1) Excellent h^FElinearity.

2) Complements the 2SC4617EB.

1.6

0.7

0.26

(3)

Structure

PNP silicon epitaxial.

planar transistor.

(1)

(2)

0.13

0.5 0.5

1.0

Each lead has same dimensions

(1) Base

Abbreviated symbol : F^∗

(2) Emitter

(3) Collector

∗ = Denotes h^FE

Absolute maximum (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

−60

−50

−6

−150

−200

150

Collector current

∗1

∗2

Power dissipation

°C

Junction temperature

Range of storage temperature

150

Tstg

−55 to +150

°C

∗1 Pw=1ms Single pulse

∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CEO

BVCBO

BVEBO

−50

−60

−6

−

=−1mA

=−50μA

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

E=−50μA

CBO

EBO

CE(sat)

−

−100

−0.5

390

−

CB=−60V

EB=−6V

/I =−50mA/−5mA

CE=−6V, I =−1mA

−

Emitter cutoff current

−

C B

Collector-emitter saturation voltage

DC current gain

120

−

140

4.0

MHz

CE=−12V, I

=2mA, f=100MHz

=0A, f=1MHz

Transition frequency

Cob

−

5.0

Output capacitance

h^FErank categories

Rank

120 to 270 180 to 390

www.rohm.com

2009.12 - Rev.C

1/2

12 3

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