2SA1774-Q

更新时间： 2024-11-26 07:29:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	169K
描述
PNP Silicon Epitaxial Transistor

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中文翻译

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数据手册

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2SA1774-Q 数据手册

M C C

2SA1774-Q

2SA1774-R

2SA1774-S

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Silicon

RoHS Compliant. See ordering information)

Small Package

Mounting:any position

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Epitaxial Transistor

SOT-523

Maximum Ratings @ T_a= 25?(unless otherwise noted)

Symbol

I_C

Parameter

Value

-0.15

Unit

Collector Current

P_D

Total Device Dissipation

Junction Temperature

0.15

T_J

150

T_STG

Storage Temperature Range

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc,I_B=0)

Collector-Base Breakdown Voltage

(I_C=-50uAdc,I_E=0)

Collector-Base Breakdown Voltage

(I_E=-50uAdc,I_C=0)

Collector-Base Cutoff Current

(V_CB=-60Vdc, I_E=0)

V(BR)CEO

-50

-60

-7.0

V(BR)CBO

V(BR)EBO

I_CBO

-0.1

µAdc

uAdc

Emitter-Base Cutoff Current

(V_EB=-6.0Vdc, I_C=0)

I_EBO

DIMENSIONS

ON CHARACTERISTICS

INCHES

DC Current Gain

H_FE

V_CE(sat)

F_T

120

560

-0.5

DIM

MIN

.059

.030

.057

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

(I_C=-1.0mAdc, V_CE=-6.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-5.0mAdc, I_B=-5.0mAdc)

Transition Frequency

(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)

Collector Output Capacitance

(VCB=-12Vdc,IC=0Adc,f=1MHZ)

Vdc

MHZ

.020 Nominal

0.50Nominal

0.90

140^(Typ)

.035

.043

.004

.031

.008

.014

1.10

.000

.028

.004

.010

.000

.70

.100

.25

.100

0.80

.200

.35

C_ob

CLASSIFICATION OF hFE

Rank

180-390

Range

120-270

270-560

Marking

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

中文翻译

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