2SA1774

更新时间： 2024-11-23 06:18:03

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管光电二极管
页数	文件大小	规格书
3页	106K
描述
GENERAL PURPOSE TRANSISTOR

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数据手册

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2SA1774 数据手册

UTC 2SA1774

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

FEATURES

* Excellent h_FElinearity

* Complements the UTC 2SC4617

MARKING

SOT-523

1: EMITTER

2: BASE

3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

-60

-50

-6

-0.15

0.15

150

UNIT

℃

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

P_C

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Tstg

-55 ~ +150

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C= -50µA

MIN TYP MAX

UNIT

µA

-60

-50

-6

I_C= -1mA

I_E= -50µA

V_CB= -60V

-0.1

Emitter Cutoff Current

I_EBO

V_EB= -6V

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Transition Frequency

h_FE

V_CE= -6V, I_C= -1mA

120

560

-0.5

V_{CE (sat)}I_C=-50mA, I_B=−5mA

f_T

C_ob

MHz

V_CE= -12V, I_E=2mA, f=100MHz

V_CB= -12V, I_E=0A, f=1MHz

140

4.0

Output Capacitance

5.0

CLASSIFICATION OF HFE1

RANK

Range

120 ~ 270

180 ~ 390

270 ~ 560

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R221-011,A

12 3

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