是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
风险等级: | 5.15 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1.9 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 28 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1627AG-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-T6C-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-X-AA3-R | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-X-T60-K | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-X-T6C-K | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-X-TM3-T | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-X-TN3-R | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-X-TN3-T | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AK | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), PNP | |
2SA1627AL-K-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |