是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.15 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.9 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 28 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1627AL-M-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1627AL-M-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AL-M-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
2SA1627AL-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AL-X-T60-K | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AL-X-T6C-K | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AL-X-TM3-T | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AL-X-TN3-R | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AL-X-TN3-T | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627G-T92-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, |