Datasheet > 2SA1483O(TE12L)

2SA1483O(TE12L)

更新时间： 2024-09-19 14:35:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	165K
描述
TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),SOT-89

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技术参数
数据手册

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2SA1483O(TE12L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	70
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

2SA1483O(TE12L) 数据手册

2SA1483

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1483

High Frequency Amplifier Applications

Unit: mm

Video Amplifier Applications

High Speed SwitcHing Applications

•

High transition frequency: f = 200 MHz (typ.)

Low collector output capacitance: C = 3.5 pF (typ.)

Complementary to 2SC3803

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

−45

−5

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Continuous base current

−200

−50

500

PW-MINI

JEDEC

―

Collector power dissipation

1000

JEITA

SC-62

2-5K1A

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-09

12 3 4

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