Datasheet > 2SA1365

2SA1365

更新时间： 2024-09-23 05:56:55

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描述
Silicon PNP Epitaxia

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中文翻译

获取价格

数据手册

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2SA1365 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxia

2SA1365

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low collector to emitter saturation voltage.

Excellent linearity nof DC forward current gain.

Super mini package for easy mounting.

High collector current.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

High gain band width product.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak collector current

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

-25

Unit

-20

-4

-1

I^C

-700

150

P^C

Collector dissipation (Ta=25

Junction temperature

Storage temperature

)

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

V ^{(BR) CBO}IC = -10 ìA, IE = 0

V ^{(BR) CEO}

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-25

-20

-4

IC = -100 ìA,RBE =

V ^{(BR) EBO}IE = -10 ìA, IC = 0

I^CBO

IEBO

h^FE

V^CE

f^T

VCB = -25 V, IE = 0

-1

ìA

Emitter cut-off current

VEB = -2 V, IC = 0

DC current gain ( * )

VCE = -4 V, IC = -100 mA

IC = -500 mA, IB = -25 mA

VCE = -6 V, IE = 10 mA

150

800

-0.5

Collector-emitter saturation voltage

Gain band width product

-0.2

180

MHz

* It shows h^FEclassification in right table.

hFE Classification

Marking

hFE

150 300

250 500

400 800

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