SMD Type
Transistors
PNP Transistors
2SA1368
1.70 0.1
Features
High Voltage VCEO = -100V
High Collector Current (ICM = -800mA)
High Collector Dissipation PC = 500mW
Small Package For Mounting
0.42 0.1
0.46 0.1
Complementary to 2SC3438
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-100
-100
-5
Unit
V
V
V
Collector Current
-500
-800
500
mA
mA
mW
Peak Collector Current
Collector Power Dissipation
Jumction temperature
ICM
PC
Tj
150
Storage temperature Range
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-100
-100
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= -100 μA, I
Ic= -1 mA,RBE=∞
= -100μA, I =0
CB= -50 V , I =0
EB= -4V , I =0
E=0
CEO
EBO
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-150mA, I
B
B
=- 15mA
=- 15mA
-0.15 -0.5
V
C
=-150mA, I
-1.2
h
FE
V
V
V
CE= -10V, I
CE= -10V, I
CE= -10V, I
C
= -10mA
= 0,f=1MHz
= 10mA
55
300
Collector Output Capacitance
Transition frequency
C
ob
T
E
E
11
pF
f
130
MHz
■ Classification of hfe
Type
Range
Marking
2SA1368-C
55-110
EC
2SA1368-D
90-180
ED
2SA1368-E
150-300
EE
1
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