Datasheet > 2SA1365_10

2SA1365_10

更新时间： 2024-11-12 12:53:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
3页	193K
描述
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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数据手册

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2SA1365_10 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SA1365

FOR HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SA1235 is a super mini silicon NPN epitaxial type

transistor designed with high collector current,small Vce(sat).

Complementary with 2SC3440.

FEATURE

●Low collector to emitter saturation voltage.

VCE(sat)=-0.2V typ

●Excellent linearity of DC forward current gain.

●Super mini package for easy mounting.

●High collector current I^CM=-1A

●High gain band width product fT=180MHz typ

JEITA：SC-59

JEDEC：Similar to TO-236

APPLICATION

Small type motor drive, relay drive, power supply.

TERMINAL CONNECTER

①：BASE

②：EMITTER

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_EBO

V_CEO

I _CM

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Peak Collector current

Collector current

Ratings

-25

Unit

③：COLLECTOR

Note)

The dimension without tolerance represent central value.

-4

-20

-1

I _C

-700

200

P_C

Collector dissipation (Ta=25℃)

※350

T_j

Junction temperature

Storage temperature

＋125

℃

T_stg

-55～＋125

※package mounted on substrate.

ELECTRICAL CHARACTERISTICS（Ta=25℃）

hFE ITEM

TYPE NAME

Limits

Parameter

Symbol

Test conditions

Unit

Min

-25

-4

Typ

Max

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

V(BR)CBO

V(BR)EBO

V(BR)CEO

ICBO

I _C=-10μA , I _E=0

I _E=-10μA , I _C=0

I _C=-100μA ,R _BE=∞

V _CB=-25V, I _E=0

V _EB=-2V, I _C=0

-20

-1

800

-0.5

μA

Emitter cut off current

IEBO

DC forward current gain

hFE

_CE=-4V, I _C=-100mA

150

C to E Saturation Vlotage

Gain band width product

VCE(sat) I _C=-500mA ,I_B=-25mA

fT _CE=-6V, I _E=10mA

-0.2

180

100

MHz

※） It shows hFE classification in below table

Marking

hFE

400 to 800

150 to 300

250 to 500

ISAHAYA ELECTRONICS CORPORATION

12 3

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与2SA1365_10相关器件

型号	品牌	获取价格	描述	数据表
2SA1365-12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365AE	ISAHAYA	获取价格	Transistor
2SA1365AF	ISAHAYA	获取价格	Transistor
2SA1365AG	ISAHAYA	获取价格	Transistor
2SA1365G	ISAHAYA	获取价格	Transistor
2SA1365-T12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1366	ISAHAYA	获取价格	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1366	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN