生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1263NR | ISC |
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暂无描述 | |
2SA1263N-R | TOSHIBA |
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TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SA1263O | ISC |
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Transistor | |
2SA1263R | ISC |
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Transistor | |
2SA1264 | TOSHIBA |
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SILICON PNP TRIPLE DIFFUSED TYPE | |
2SA1264 | NJSEMI |
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Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 | |
2SA1264N | JMNIC |
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Silicon PNP Power Transistors | |
2SA1264N | SAVANTIC |
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Silicon PNP Power Transistors | |
2SA1264N | ISC |
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Silicon PNP Power Transistors | |
2SA1264NO | ISC |
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Transistor |