2SA1263NR

更新时间： 2024-09-15 13:01:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	150K
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中文翻译

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2SA1263NR 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1263N

DESCRIPTION

·With TO-3P(I) package

·Complement to type 2SC3180N

·2SA1263 with short pin

APPLICATIONS

·Power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3P(I)) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-80

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-80

Open collector

-5

-6

I_B

Base current

-0.6

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

中文翻译

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