Datasheet > 2SA1267

2SA1267

更新时间： 2024-09-24 14:55:11

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	192K
描述
小信号晶体管

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2SA1267 数据手册

2SA1267

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into three groups, O,

Y and G according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

150

Emitter Current

I_E

150

Power Dissipation

P_tot

400

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 6 V, -I_C= 2 mA

Current Gain Group O

h_FE

120

200

140

240

400

Collector Base Cutoff Current

at -V_CB= 50 V

-I_CBO

-I_EBO

-V_CE(sat)

f_T

100

0.3

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Transition Frequency

at -V_CE= 10 V, -I_C= 1 mA

MHz

Collector Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_ob

Dated：18/08/2016 Rev：03

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与2SA1267相关器件

型号	品牌	获取价格	描述	数据表
2SA1267GR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| TO-92
2SA1267O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| TO-92
2SA1267Y	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| TO-92
2SA1268	SWST	获取价格	小信号晶体管
2SA1270	KEC	获取价格	SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE
2SA1270	SWST	获取价格	小信号晶体管
2SA1271	KEC	获取价格	SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE
2SA1271	SWST	获取价格	小信号晶体管
2SA1272	KEC	获取价格	SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
2SA1273	KEC	获取价格	Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS)