Datasheet > 2SA1201_15

2SA1201_15

更新时间： 2024-09-22 01:26:19

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	109K
描述
PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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2SA1201_15 数据手册

RoHS

2SA1201

SOT-89

1. ^BASE

2SA1201 TRANSISTOR (PNP)

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM

: 500

mW (Tamb=25℃)

Collector current

I_CM

: -800

Collector-base voltage

_(BR)CBO: -120

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-1mA, I_E=0

MIN

-120

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Ic=-10mA, I_B=0

I_E=-1mA, I_C=0

µA

V_CB=-120V, I_E=0

-0.1

240

-1

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

V_CE(sat)

V_BE

DC current gain

V_CE=-5V, I_C=-100mA

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-500mA, I_B=-50mA

_CE=-5V, I_C=-500mA

-1

MHz

Transition frequency

f_T

V_CE=-5V, I_C=-100mA

_CB=-10V, I_E=0, f=1MHz

120

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

Range

80-160

120-240

WEJ ELECTRONIC CO.,LTD

Marking

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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