Datasheet > 2SA1201Y

2SA1201Y

更新时间： 2024-09-20 23:19:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	107K
描述
TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 800MA I(C) \| SOT-89

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中文翻译

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数据手册

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2SA1201Y 数据手册

2SA1201

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1201

Voltage Amplifier Applications

Power Amplifier Applications

Unit: mm

High voltage: V

= −120 V

CEO

High transition frequency: f = 120 MHz (typ.)

Small flat package

= 1 to 2 W (mounted on ceramic substrate)

Complementary to 2SC2881

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−120

−5

CBO

CEO

EBO

−800

−160

500

Base current

PW-MINI

JEDEC

―

Collector power dissipation

JEITA

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

−55 to 150

stg

Note 1: Mounted on ceramic substrate (250 mm²× 0.8 t)

2002-08-13

12 3 4

中文翻译

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