Datasheet > 2SA1202-Y

2SA1202-Y

更新时间： 2024-11-19 01:18:11

品牌	Logo	应用领域
科信 - KEXIN		放大器晶体管
页数	文件大小	规格书
2页	1298K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1202-Y 数据手册

SMD Type

Transistors

PNP Transistors

2SA1202

1.70 0.1

Features

Suitable for Driver of 30 to 35 Watts Audio Amplifier

Small Flat Package

0.42 0.1

PC = 1 to 2W (mounted on ceramic substrate)

Complementary to 2SC2882

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

-5

-400

-80

Base Current

I^B

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1000

150

Jumction temperature

Storage temperature Range

Tstg

-55 to +150

* Mounted on ceramic substrate (250 mm²x 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= -100 μA， I

Ic= -10 mA， I

= -100μA， I

CB= -80 V , I =0

EB= -5V , I =0

CEO

EBO

CBO

EBO

-100

-0.4

-1.2

-0.8

240

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-200 mA, I

=- 20mA

=-200 mA, I

=-5 mA, VCE= -2V

-0.55

FE(1)

FE(2)

CE= -2V, I

= -50mA

DC current gain

C= -200mA

Output capacitance

Transition frequency

CE= -10V,I

=0,f=1MHz

= -10mA

CE= -10V, I

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1202-O

70-140

2SA1202-Y

120-240

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