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2SA1201-O PDF预览

2SA1201-O

更新时间: 2024-11-30 07:29:35
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 506K
描述
PNP Silicon Power Transistors

2SA1201-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
外壳连接:COLLECTOR最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SA1201-O 数据手册

 浏览型号2SA1201-O的Datasheet PDF文件第2页浏览型号2SA1201-O的Datasheet PDF文件第3页 
M C C  
2SA1201-O  
2SA1201-Y  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Power amplifier applications  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
PNP Silicon  
Power Transistors  
·
·
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
-120  
-120  
-5.0  
-800  
Unit  
V
V
SOT-89  
A
V
K
B
mA  
mA  
W
IB  
PC  
Base Current  
Collector power dissipation  
-160  
500  
1000(Note 1)  
TJ  
Junction Temperature  
Storage Temperature  
150  
R
R
E
C
TSTG  
-55 to +150  
Note 1: Mounted on ceramic substrate (250mm2 x 0.8t)  
D
G
H
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
J
F
Symbol  
Parameter  
Min  
Typ.  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=-10mAdc, IB=0)  
Collector-Emitter Breakdown Voltage*  
(IE=-1mAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=-120Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
-120  
-5  
---  
---  
---  
---  
---  
Vdc  
Vdc  
1
2
3
---  
-0.1  
-0.1  
uAdc  
uAdc  
1.BASE  
2.COLLECTOR  
3.EMITTER  
IEBO  
---  
ON CHARACTERISTICS  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
hFE  
VCE(sat)  
VBE  
Forward Current Transfer ratio  
80  
---  
---  
---  
---  
---  
---  
240  
-1.0  
-1.0  
---  
---  
Vdc  
Vdc  
MHz  
pF  
ꢀꢁꢂꢆ  
ꢁꢄꢇꢈꢃꢅꢆ  
ꢂꢂꢆ  
ꢄꢋꢌꢃꢅꢆ  
(IC=-0.1Adc, VCE=-5.0Vdc) (Note 2)  
Collector-Emitter Saturation Voltage  
(IC=-0.5Adc, IB=-50mAdc)  
Base-Emitter Voltage  
(IC=-0.5Adc, VCE=-5.0Vdc)  
Transition Frequency  
(IC=-0.1Adc, VCE=-5.0Vdc)  
Collector Output Capacitance  
(VCB=-10V, IE=0, f=1MHz)  
ꢂꢁꢄꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢂꢉꢊꢆ  
ꢂꢁꢄꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢂꢉꢊꢆ  
ꢉꢆ  
ꢖꢆ  
ꢇꢆ  
ꢀꢆ  
ꢃꢆ  
ꢙꢆ  
ꢝꢆ  
ꢈꢆ  
ꢞꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
---  
ꢌꢛꢜꢆ  
fT  
120  
---  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
Cob  
30  
 ꢆ  
CLASSIFICATION OF HFE (1)  
Rank  
Range  
Marking  
O
80-160  
DO  
Y
120-240  
DY  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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