是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.63 | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 80 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1201L-O-T92-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, | |
2SA1201L-O-T92-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1201L-X-AB3-R | UTC |
获取价格 |
SILICON PNP EPITAXIAL TRANSISTOR | |
2SA1201L-X-T92-B | UTC |
获取价格 |
SILICON PNP EPITAXIAL TRANSISTOR | |
2SA1201L-X-T92-K | UTC |
获取价格 |
SILICON PNP EPITAXIAL TRANSISTOR | |
2SA1201L-Y-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, LEAD F | |
2SA1201L-Y-T92-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, | |
2SA1201L-Y-T92-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1201O | ETC |
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TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SOT-89 | |
2SA1201-O | MCC |
获取价格 |
PNP Silicon Power Transistors |