Datasheet > 2SA1201

2SA1201

更新时间： 2024-01-15 14:16:35

品牌	Logo	应用领域
SECOS		晶体晶体管放大器
页数	文件大小	规格书
2页	232K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

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技术参数
数据手册

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2SA1201 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2SA1201 数据手册

2SA1201

PNP Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-89

FEATURES

High voltage

High transition frequency

Complementary to 2SC2881

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-120

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Emitter-Base Voltage

Min.

4.4

Max.

4.6

Collector Current -Continuous

-0.8

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.5

℃

T_J

150

5q TYP.

0.70 REF.

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-1mA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-1mA,I_C=0

-120

-5

I_CBO

I_EBO

h_FE

V_CB=-120V,I_E=0

-0.1

240

-1

μA

Emitter cut-off current

V_EB=-5V,I_C=0

DC current gain

V_CE=-5V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-500mA

V_CE=-5V,I_C=-100mA

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

80-160

120-240

Range

Marking

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

08-May-2007 Rev. A

Page 1 of 2

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