Datasheet > 2SA1201_07

2SA1201_07

更新时间： 2024-09-21 04:25:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	147K
描述
Voltage Amplifier Applications Power Amplifier Applications

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2SA1201_07 数据手册

2SA1201

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1201

Voltage Amplifier Applications

Power Amplifier Applications

Unit: mm

•

High voltage: V

= −120 V

CEO

High transition frequency: f = 120 MHz (typ.)

Small flat package

= 1 to 2 W (mounted on a ceramic substrate)

Complementary to 2SC2881

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−120

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−800

−160

500

Base current

PW-MINI

JEDEC

―

Collector power dissipation

JEITA

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-09

12 3 4

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