Datasheet > 2SA1160_07

2SA1160_07

更新时间： 2024-11-07 04:25:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器闪光灯
页数	文件大小	规格书
4页	150K
描述
Strobe Flash Applications Medium Power Amplifier Applications

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2SA1160_07 数据手册

2SA1160

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1160

Strobe Flash Applications

Unit: mm

Medium Power Amplifier Applications

•

High DC current gain and excellent h

linearity

: h

= 140 to 600 (V

= −1 V, I = −0.5 A)

FE (1)

FE (2)

CE C

= 60 (min), 120 (typ.) (V

= −1 V, I = −4 A)

Low saturation voltage

: V = −0.5 V (max) (I = −2 A, I = −50 mA)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−20

−10

Collector-emitter voltage

Emitter-base voltage

−6

Pulsed (Note 1)

−2

Collector current

−4

JEDEC

JEITA

TO-92MOD

Base current

−2

°C

Collector power dissipation

Junction temperature

900

―

150

TOSHIBA

2-5J1A

Storage temperature range

stg

−55 to 150

°C

Weight: 0.36 g (typ.)

Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-09

12 3 4

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2SA1160-B	TOSHIBA	获取价格	暂无描述
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2SA1160-C	TOSHIBA	获取价格	暂无描述