Datasheet > 2SA1160B(TO-92M)

2SA1160B(TO-92M)

更新时间： 2024-02-19 15:45:14

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2SA1160B(TO-92M) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1160B(TO-92M) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

TO – 92M

2SA1160 TRANSISTOR (PNP)

1. COLLECTOR

1. EMITTER

2. BASE

FEATURES

2. COLLECTOR

3. EMITTER

3. BASE

High DC Current Gain and Excellent h_FELinearity

Low Saturation Voltage

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-20

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-10

-6

Collector Current

-2

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

900

℃/W

℃

R_θJA

T_j

139

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-20

-10

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA,I_E=0

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-20V,I_E=0

-0.1

600

μA

Emitter cut-off current

I_EBO

V_EB=-6V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-0.5A

V_CE=-1V, I_C=-4A

I_C=-2A,I_B=-0.05A

V_CE=-1V, I_C=-2A

V_CB=-10V,I_E=0, f=1MHz

VCE=-1V,IC=-0.5A

140

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

-0.5

-1.5

Collector output capacitance

Transition frequency

C_ob

f_T

140

MHz

CLASSIFICATION OF h_FE(1)

RANK

RANGE

140-280

200-400

300-600

A,Dec,2010

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