Datasheet > 2SA1162

2SA1162

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	598K
描述
双极型晶体管

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技术参数
数据手册

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2SA1162 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	0.15	DC current gain - Min：	70
DC current gain - Max：	400	Transition frequency：	80
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

2SA1162 数据手册

2SA1162

SOT-23 Transistor(PNP)

1. BASE

SOT-23

2. EMITTER

3. COLLECTOR

Features

Low noise: NF=1dB(Typ.)10dB(Max.)

Complementary to 2SC2712

Small package

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-50

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Dimensions in inches and (millimeters)

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-150

150

℃

P_C

T_J

125

T_stg

-55-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-50V,I_E=0

-0.1

400

-0.3

μA

Emitter cut-off current

V_EB=-5V,I_C=0

DC current gain

V_CE=-6V,I_C=-2mA

I_C=-100mA,I_B=-10mA

V_CE=-10V,I_C=-1mA

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

V_CE=-6V,I_C=0.1mA,f=1KHz,

Noise figure

Rg=10KΩ

CLASSIFICATION OF h_FE

Rank

70-140

120-240

GR(G)

200-400

Range

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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