是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | End Of Life | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.76 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 300 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.9 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 140 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1160TPE6 | TOSHIBA |
获取价格 |
TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SA1161 | NJSEMI |
获取价格 |
New Jersey Semi-Conductor Products, | |
2SA1161TPE2 | TOSHIBA |
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TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal | |
2SA1162 | MCC |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1162 | NJSEMI |
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New Jersey Semi-Conductor Products, | |
2SA1162 | TYSEMI |
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High voltage and high current: VCEO = -50 V, IC = 150 mA (max) | |
2SA1162 | WINNERJOIN |
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PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1162 | TOSHIBA |
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TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | |
2SA1162 | KEXIN |
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Silicon PNP Epitaxial Type Transistor | |
2SA1162 | HTSEMI |
获取价格 |
TRANSISTOR(PNP) |