Datasheet > 2SA1020RLRAG

2SA1020RLRAG

更新时间： 2024-11-19 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
5页	146K
描述
1.0 W High Current PNP Bipolar Transistor

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2SA1020RLRAG 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
零件包装代码：	TO-92	包装说明：	CYLINDRICAL, O-PBCY-T3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
Factory Lead Time：	1 week	风险等级：	5.69
Is Samacsys：	N	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	50 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e1
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	260	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.5 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

2SA1020RLRAG 数据手册

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与2SA1020RLRAG相关器件

型号	品牌	获取价格	描述	数据表
2SA1020-X-AB3-R	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020-X-AE3-R	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020-X-T9N-B	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020-X-T9N-K	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020Y	UTC	获取价格	Transistor
2SA1020Y	TRSYS	获取价格	Transistor
2SA1020-Y	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1020Y(TO-92L)	CJ	获取价格	Transistor
2SA1020Y(TPE6,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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