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2SA1020-Y-AB3-R PDF预览

2SA1020-Y-AB3-R

更新时间: 2024-11-18 02:53:03
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管
页数 文件大小 规格书
4页 199K
描述
SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-AB3-R 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.68最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2SA1020-Y-AB3-R 数据手册

 浏览型号2SA1020-Y-AB3-R的Datasheet PDF文件第2页浏览型号2SA1020-Y-AB3-R的Datasheet PDF文件第3页浏览型号2SA1020-Y-AB3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
2SA1020  
PNP SILICON TRANSISTOR  
SILICON PNP EPITAXIAL  
TRANSISTOR  
1
DESCRIPTION  
SOT-89  
The UTC 2SA1020 is designed for power amplifier and power  
switching applications.  
FEATURES  
1
*Low collector saturation voltage:  
CE(SAT)=-0.5V(max.) (IC=-1A)  
TO-92NL  
V
*High speed switching time: tSTG=1.0µs(Typ.)  
*Complement to UTC 2SC2655  
*Pb-free plating product number:2SA1020L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
2SA1020L-x-AB3-R  
2SA1020L-x-T9N-B  
2SA1020L-x-T9N-K  
1
B
E
E
2
C
C
C
3
E
B
B
2SA1020-x-AB3-R  
2SA1020-x-T9N-B  
2SA1020-x-T9N-K  
SOT-89  
TO-92NL  
TO-92NL  
Tape Reel  
Tape Box  
Bulk  
2SA1020L-x-AB3-R  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(1) B: Tape Box, K: Bulk, R: Tape Reel  
(2) AB3: SOT-89, T9N: TO-92NL  
(3) x: refer to Classification of h  
FE1  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R211-007,B  

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