Datasheet > 2SA1022-C

2SA1022-C

更新时间： 2024-02-28 05:33:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	734K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1022-C 数据手册

SMD Type

Transistors

PNP Transistors

2SA1022

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High transition frequency fT.

● Complementary to 2SC2295

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-30

Unit

VCBO

VCEO

VEBO

-20

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-30

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-30

-20

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emittercut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

CEO

CB= -30 V , I

CE= -20 V , I

EB= -5V , I

-0.1

-10

EBO

-0.1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-10 mA, I

=-1mA

-0.1

-0.7

C=-10 mA, I

B=-1mA

-1.2

220

CE = -10 V, I

=-1mA

DC current gain

Reverse transfer impedance

Noise figure

CB = –10V, I

= 1mA, f = 2MHz

2.8

1.2

300

CB = –10V, IE = 1mA, f = 5MHz

Common emitter reverse transfer capacitance

Transition frequency

CE= -10V, I

CB= -10V, I

= -1mA,f=10.7MHz

= 1mA,f=200MHz

150

MHz

■ Classification of hfe

Type

Range

Marking

2SA1022-B

70-140

2SA1022-C

110-220

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