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2SA1022

更新时间: 2024-02-05 15:09:40
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 59K
描述
High transition frequency fT. Mini type package,allowing downsizing of the equipment and automatic

2SA1022 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz

2SA1022 数据手册

  
Product specification  
2SA1022  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High transition frequency fT.  
Mini type package,allowing downsizing of the equipment and automatic  
insertion through the tape packing and the magazine packing.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
-20  
V
-5  
V
-30  
mA  
mW  
Collector power dissipation  
Junction temperature  
PC  
200  
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-0.1  
-100  
-10  
Unit  
ìA  
VCB = -10 V, IE = 0  
VCE = -20 V, IB = 0  
VEB = -5.0 V, IC = 0  
VCE = -10 V, IC = -1 mA  
Collector cutoff current  
ICEO  
ìA  
Emitter cutoff current  
IEBO  
ìA  
Forward current transfer ratio  
Collector to emitter saturation voltage  
Base to emitter voltage  
hFE  
70  
220  
VCE(sat) IC = -10 mA, IB = -1 mA  
VBE VCE =-10 V, IC = -1 mA  
fT  
-0.1  
-0.7  
300  
2.8  
22  
V
V
Transition frequency  
VCB = -10 V, IE = 1 mA f = 200 MHz  
VCB = -10 V, IE = 1 mA f = 5 MHz  
VCB = -10 V, IE = 1 mA f = 2 MHz  
150  
MHz  
dB  
Ù
Noise figure  
NF  
Zrb  
Cre  
Reverse transfer impedance  
Common emitter reverse transfer capacitance  
VCE = -10 V, Ic = -1 mA f = 10.7 MHz  
1.2  
pF  
hFE Classification  
Marking  
hFE  
EB  
EC  
70 140  
110 220  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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