Datasheet > 2SA1024

2SA1024

更新时间： 2023-12-06 20:08:04

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	20K
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小信号晶体管

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2SA1024 数据手册

2SA1024

PNP Silicon Epitaxial Planar Transistor

for high voltage applications.

The transistor is subdivided into two groups, O and Y

according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

150

Emitter Current

I_E

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 10 mA

Current Gain Group

h_FE

120

140

240

Collector Base Cutoff Current

at -V_CB= 150 V

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Emitter Saturation Voltage

at -I_C= 10 mA, -I_B= 1 mA

Base Emitter Voltage

at -V_CE= 5 V, -I_C= 30 mA

Gain Bandwidth Product

at -V_CE= 30 V, -I_C= 10 mA

Output Capacitance

-I_CBO

-I_EBO

-V_CE(sat)

-V_BE

f_T

0.1

0.8

0.9

µA

120

MHz

C_OB

at -V_CB= 10 V, f = 1 MHz

Dated: 18/08/2016 Rev: 02

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