2SA1020-Y

更新时间： 2024-01-05 09:26:25

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
5页	193K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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2SA1020-Y 数据手册

2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1020

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low Collector saturation voltage: V

= −0.5 V (max) (I = −1 A)

CE (sat) C

High collector power dissipation: P = 900 mW

High-speed switching: t

= 1.0 μs (typ.)

stg

Complementary to 2SC2655

Absolute Maximum Ratings (T = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−2

Base current

−0.2

900

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

Storage temperature range

°C

―

150

stg

−55 to 150

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-11-09

12 3 4 5

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