Datasheet > 2SA1018Q

2SA1018Q

更新时间： 2024-11-16 23:19:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 70MA I(C) \| TO-92

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中文翻译

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数据手册

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2SA1018Q 数据手册

Transistor

2SA1018

Silicon PNP epitaxial planer type

For general amplification

Unit: mm

4.0±0.2

Complementary to 2SC1473

5.0±0.2

Features

High collector to emitter voltage V_CEO

■

●

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–250

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.45–⁺0⁰.^.1²

–200

1.27

–5

–100

˚C

I_C

–70

1 2 3

1:Emitter

Collector power dissipation

Junction temperature

Storage temperature

P_C

750

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

2.54±0.15

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CEO

Conditions

V_CE= –120V, I_B= 0, Ta = 60˚C

I_C= –100µA, I_B= 0

min

typ

max

Unit

µA

Collector cutoff current

–1

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

–200

–5

I_E= –1µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –10V, I_C= –5mA

220

Collector to emitter saturation voltage V_CE(sat)

_C= –50mA, I_B= –5mA

–1.5

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –10V, I_E= 0, f= 1MHz

Collector output capacitance

C_ob

^*h_FERank classification

Rank

h_FE

60 ~ 150

100 ~ 220

12 3

中文翻译

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