Datasheet > 2SA1020L-O

2SA1020L-O

更新时间： 2024-11-19 01:23:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	491K
描述
PNP Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SA1020L-O 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SA1020L-O

2SA1020L-Y

Micro Commercial Components

Features

Halogen free available upon request by adding suffix "-HF"

•

Collector of 0.9Watts of Power Dissipation.

Collector-current -2.0A

Operating and storage junction temperature range: -55R to +150R

Epoxy meets UL 94 V-0 flammability rating

PNP

•

Plastic-Encapsulate

Transistor

•

Moisture Sensitivity Level 1

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Electrical Characteristics @ 25 C Unless Otherwise Specified

TO-92L

Symbol

Parameter

Min

Max

Units

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

-50

---

Vdc

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

(I_C=-100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-100mAdc, I_C=0)

Collector Cutoff Current

(V_CB=-50Vdc, I_E=0)

Emitter Cutoff Current

-50

-5.0

---

Vdc

---

-1.0

µAdc

I_EBO

---

(V_EB=-5.0Vdc, I_C=0)

h_FE(1)

DC Current Gain

(I_C=-0.5Adc, V_CE=-2.0Vdc)

DC Current Gain

(I_C=-1.5Adc, V_CE=-2.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-1Adc, I_B=-50mAdc)

Base-Emitter Saturation Voltage

(I_C=-1.0Adc, I_B=-50mA)

---

240

---

h_FE(2)

---

V_CE(sat)

V_BE(sat)

-0.5

-1.2

Vdc

f_T

Transistor Frequency

(I_C=-500mAdc, V_CE=-2.0Vdc,)

100(Typ)

MHz

STRAIGHT LEAD BENT LEAD

BULK PACK AMMO PACK

C_ob

Collector output capacitance

(I_E=0, V_CB=-10Vdc,f=1MHz)

40(Typ)

t_on

Turn-0n time

(I_B1=-I_B2=-0.05, V_CC=-30Vdc,I_C=-1Adc)

Storage time

(I_B1=-I_B2=-0.05, V_CC=-30Vdc,I_C=-1Adc)

0.1(Typ)

1.0(Typ)

0.1(Typ)

µs

DIMENSIONS

INCHES

Fall time

DIM

MIN

3.700

4.000

0.000

0.350

1.280

4.700

7.800

13.80

.600

MAX

4.100

---

MIN

.146

.157

0.000

.014

.050

.185

.307

.543

.024

.014

MAX

.161

---

NOTE

(I_B1=-I_B2=-0.05, V_CC=-30Vdc,I_C=-1Adc)

0.300

0.450

1.580

5.100

8.200

14.20

.800

0.012

.018

.062

.201

.323

.559

.031

.022

CLASSIFICATION OF HFE (1)

Rank

Range

70-140

120-240

0.350

.550

Straight Lead

Bent Lead

1.270

.050

2.200

2.440

4.400

2.800

2.640

5.600

.086

.096

.173

.110

.104

.220

Straight Lead

Bent Lead

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

www.mccsemi.com

1 of 2

Revision: C

2013/01/01

中文翻译

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2SA1020L-O-AB3-B	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-O-AB3-K	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-O-AB3-R	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-O-AE3-R	UTC	获取价格	Small Signal Bipolar Transistor, 2A I(C), PNP,
2SA1020L-O-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1020L-O-BP	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1020L-O-T9N-B	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-O-T9N-K	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-O-T9N-R	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR
2SA1020L-X-AB3-R	UTC	获取价格	SILICON PNP EPITAXIAL TRANSISTOR

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