Datasheet > 2SA1020N1PT

2SA1020N1PT

更新时间： 2024-09-25 05:57:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	119K
描述
PNP Epitaxial Transistor

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2SA1020N1PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SA1020N1PT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 0.5 Ampere

APPLICATION

* Power amplifier .

FEATURE

* Small flat package. (FBPT-923)

FBPT-923

* Low saturation voltage V^CE(sat)=-0.5V(max.)(IC=-0.5A)

* High speed switching time: t^stg= 1.0uSec (typ.)

* High saturation current capability.

0.5±0.05

1.0±0.05

0.37(REF.)

0.25(REF.)

CONSTRUCTION

1.0±0.05

Switching Transistor

* PNP

0.05±0.04

0.68±0.05

0.42±0.05

0.3±0.05

C⁽³⁾

CIRCUIT

(1)

0.26±0.05

E ₍₂₎

Dimensions in millimeters

FBPT-923

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-50

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-50

-5

Volts

mAmps

Open Collector

-500

-1000

-50

Peak Collector Current

Peak Base Current

ICM

IBM

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

100

-55

+150

^oC

TAMB

-55

^oC

2006-07

Note

1. Transistor mounted on PCB 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

12 3 4

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