5秒后页面跳转
2SA1020_10 PDF预览

2SA1020_10

更新时间: 2024-01-28 08:24:36
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
3页 422K
描述
PNP Plastic Encapsulated Transistor

2SA1020_10 数据手册

 浏览型号2SA1020_10的Datasheet PDF文件第2页浏览型号2SA1020_10的Datasheet PDF文件第3页 
2SA1020  
-2A, -50V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92MOD  
FEATURES  
N
Power amplifier applications  
G
H
Emitter  
Collector  
Base  
CLASSIFICATION OF hFE(1)  
M
J
L
Product-Rank  
Range  
2SA1020-O  
70-140  
2SA1020-Y  
120-240  
A
D
B
K
E
F
C
Collector  
  
Millimeter  
Millimeter  
  
Base  
REF.  
REF.  
Min.  
Max.  
Min.  
Max.  
2.05  
3.20  
1.15  
A
B
C
D
E
F
5.50  
8.00  
12.70  
4.50  
0.35  
0.30  
6.50  
9.00  
14.50  
5.30  
0.65  
0.51  
H
J
K
L
M
N
1.70  
2.70  
0.85  
  
Emitter  
1.60 Max  
0.00  
0.40  
4.00 Min  
G
1.50 TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-50  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
-50  
-5  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
-2  
900  
A
PC  
mW  
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-50  
-
-
V
V
IC= -100μA, IE = 0A  
IC= -10mA, IB = 0A  
IE= -100μA, IC = 0A  
VCB= -50 V, IE = 0 A  
VEB= -5 V, IC = 0 A  
VCE= -2V, IC= -0.5A  
VCE= -2V, IC= -1.5A  
IC= -1A, IB= -50mA  
IC= -1A, IB= -50mA  
-50  
-
-
-5  
-
-
-
V
-
-
-1  
μA  
μA  
Emitter Cut-Off Current  
IEBO  
-
-1  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
70  
40  
-
-
240  
DC Current Gain  
-
-
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
Collector Output Capacitance  
Turn-on Time  
-
-0.5  
V
V
-
-
-1.2  
-
100  
40  
0.1  
1
-
-
-
-
-
MHz VCE = -2V, IC = -500mA  
Cob  
-
pF  
VCB = -10V, IE = 0 A, f=1MHz  
CC= -30V  
Ton  
-
V
Storage Time  
Ts  
-
μs  
IB1= -IB2= -0.05A  
IC= -1A  
Fall Time  
Tf  
-
0.1  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
31-Dec-2010 Rev. B  
Page 1 of 3  

与2SA1020_10相关器件

型号 品牌 获取价格 描述 数据表
2SA1020_11 UTC

获取价格

SILICON PNP EPITAXIAL TRANSISTOR
2SA1020-AH SWST

获取价格

小信号晶体管
2SA1020G TOSHIBA

获取价格

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
2SA1020G-O-AB3-R UTC

获取价格

Small Signal Bipolar Transistor, 2A I(C), PNP,
2SA1020G-O-T9N-B UTC

获取价格

Small Signal Bipolar Transistor, 2A I(C), PNP,
2SA1020G-X-AB3-R UTC

获取价格

SILICON PNP EPITAXIAL TRANSISTOR
2SA1020G-X-AE3-R UTC

获取价格

SILICON PNP EPITAXIAL TRANSISTOR
2SA1020G-X-T9N-B UTC

获取价格

SILICON PNP EPITAXIAL TRANSISTOR
2SA1020G-X-T9N-K UTC

获取价格

SILICON PNP EPITAXIAL TRANSISTOR
2SA1020G-Y-AB3-R UTC

获取价格

Small Signal Bipolar Transistor, 2A I(C), PNP,