5秒后页面跳转
2SA1020 PDF预览

2SA1020

更新时间: 2024-02-28 17:23:24
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 132K
描述
TRANSISTOR (PNP)

2SA1020 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

2SA1020 数据手册

  
RoHS  
2SA1020  
TO-92MOD  
2SA1020 TRANSISTOR (PNP)  
1. EMITTER  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM  
: 900  
mW (Tamb=25)  
Collector current  
ICM  
: -2  
A
123  
Collector-base voltage  
(BR)CBO : -50  
V
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-50  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=-100 µA, IC=0  
VCB=-50 V, IE=0  
VEB=-5 V, IC=0  
µA  
µA  
-1  
IEBO  
Emitter cut-off current  
-1  
hFE(1)  
VCE=-2 V, IC=-500 A  
IC=-1A, IB=-50 mA  
IC=-1 A, IB=-50 mA  
DC current gain  
70  
240  
-0.5  
-1.2  
VCE(sat)  
VBE(sat)  
f T  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE=-2 V, IC=-500 mA  
MHz  
100  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
70-140  
120-240  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

与2SA1020相关器件

型号 品牌 描述 获取价格 数据表
2SA1020_05 UTC SILICON PNP EPITAXIAL TRANSISTOR

获取价格

2SA1020_07 TOSHIBA Power Amplifier Applications Power Switching Applications

获取价格

2SA1020_10 SECOS PNP Plastic Encapsulated Transistor

获取价格

2SA1020_11 UTC SILICON PNP EPITAXIAL TRANSISTOR

获取价格

2SA1020-AH SWST 小信号晶体管

获取价格

2SA1020G TOSHIBA One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

获取价格