Datasheet > 2SA1020

2SA1020

更新时间： 2024-11-19 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	132K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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2SA1020 数据手册

RoHS

2SA1020

TO-92MOD

2SA1020 TRANSISTOR (PNP)

1. EMITTER

FEATURES

Power dissipation

2. COLLECTOR

3. BASE

P_CM

: 900

mW (Tamb=25℃)

Collector current

I_CM

: -2

123

Collector-base voltage

_(BR)CBO: -50

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-100µA, I_E=0

Ic=-1mA, I_B=0

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100 µA, I_C=0

V_CB=-50 V, I_E=0

V_EB=-5 V, I_C=0

µA

-1

I_EBO

Emitter cut-off current

-1

h_FE(1)

V_CE=-2 V, I_C=-500 A

I_C=-1A, I_B=-50 mA

I_C=-1 A, I_B=-50 mA

DC current gain

240

-0.5

-1.2

V_CE(sat)

V_BE(sat)

f _T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE=-2 V, I_C=-500 mA

MHz

100

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

120-240

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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