Datasheet > 2SA1020

2SA1020

更新时间： 2024-11-17 06:17:27

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
3页	158K
描述
TO-92L Plastic-Encapsulate Transistors

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数据手册

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2SA1020 数据手册

TO-92L Plastic-Encapsulate Transistors

TO-92L

2SA1020 TRANSISTOR (PNP)

1. EMITTER

FEATURES

Power amplifier applications

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

1 2 3

-5

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

900

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100µA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-100µA,I_C=0

I_CBO

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CB=-50V,I_E=0

-1

µA

Emitter cut-off current

V_EB=-5V,I_C=0

V_CE=-2V,I_C=-0.5A

V_CE=-2V,I_C=-1.5A

I_C=-1A,I_B=-50mA

V_CE=-2V,I_C=-500mA

V_CB=-10V,I_E=0,f=1MHz

240

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

-0.5

-1.2

100

0.1

MHz

μs

C_ob

t_on

_CC=-30V,I_B1=-I_B2=-0.05A, I_C=-1A

Storage time

μs

Fall time

0.1

μs

CLASSIFICATION OF h_FE(1)

Rank

70-140

120-240

Range

12 3

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