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2SA1020 PDF预览

2SA1020

更新时间: 2024-11-18 22:00:03
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管
页数 文件大小 规格书
4页 172K
描述
PNP EPITAXIAL SILICON TRANSISTOR

2SA1020 数据手册

 浏览型号2SA1020的Datasheet PDF文件第2页浏览型号2SA1020的Datasheet PDF文件第3页浏览型号2SA1020的Datasheet PDF文件第4页 
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
SILICON PNP EPITAXIAL  
TRANSISTOR  
DESCRIPTION  
The UTC 2SA1020 is designed for power amplifier and  
power switching applications.  
1
FEATURES  
*Low collector saturation voltage:  
VCE(sat)=-0.5V(max.) (IC=-1A)  
*High speed switching time: tstg=1.0µs(Typ.)  
*Complement to UTC 2SC2655  
SOT-89  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
Collector-Base Voltage  
-50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
-5  
-2  
Collector Power Dissipation  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
PC*  
Tj  
TSTG  
0.5  
1
150  
W
W
°C  
°C  
-55 ~ +150  
* : Mounted on cermic substrate( 250mm2 × 0.8t )  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector cut-off current  
Emitter cut-off current  
Collector to emitter breakdown  
voltage  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
MIN TYP MAX UNIT  
-1.0  
-1.0  
µA  
µA  
V
IEBO  
V(BR)CEO  
Ic=-10mA, IB=0  
-50  
DC Current Gain  
hFE1  
hFE2  
VCE(sat)  
VCE=-2V, IC=-0.5A  
VCE=-2V, IC=-1.5A  
Ic=-1A, IB=-0.05A  
70  
40  
240  
-0.5  
-1.2  
Collector to emitter saturation  
voltage  
Base to emitter saturation voltage  
Transition frequency  
Collector output capacitance  
Switching time  
V
VBE(sat)  
fT  
Cob  
ton  
tstg  
tf  
Ic=-1A, IB=-0.05A  
VCE=-2V, Ic=-0.5A  
VCB=-10V, IE=0, f=1MHz  
V
MHz  
pF  
µs  
µs  
100  
40  
0.1  
1.0  
0.1  
Turn-on time  
Storage time  
Fall time  
µs  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-021,A  

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