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2SA1016K_08

更新时间: 2024-11-17 06:25:03
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三洋 - SANYO 放大器高压
页数 文件大小 规格书
5页 65K
描述
High-Voltage Low-Noise Amp Applications

2SA1016K_08 数据手册

 浏览型号2SA1016K_08的Datasheet PDF文件第2页浏览型号2SA1016K_08的Datasheet PDF文件第3页浏览型号2SA1016K_08的Datasheet PDF文件第4页浏览型号2SA1016K_08的Datasheet PDF文件第5页 
Ordering number : EN0572F  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Transistors  
2SA1016, 1016K  
2SC2362, 2362K  
High-Voltage Low-Noise Amp  
Applications  
Specifications ( ) : 2SA1016, 1016K  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
2SA1016, 2SC2362  
(--)120  
2SA1016K, 2SC2362K  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(--)150  
(--)100  
(--)120  
V
(--)5  
(--)50  
(--)100  
400  
V
I
C
mA  
mA  
mW  
°C  
°C  
Collector Current (Pulse)  
Collector Dissipation  
I
CP  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
125  
--55 to +125  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=(--)80V, I =0A  
Unit  
min  
max  
(--)1.0  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
V
V
V
V
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
I
=(--)4V, I =0A  
(--)1.0  
960*  
EBO  
C
DC Current Gain  
h
=(--)6V, I =(--)1mA  
160*  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
=(--)6V, I =(--)1mA  
C
(110)130  
(2.2)1.8  
MHz  
pF  
V
T
Cob  
(sat)  
=(--)10V, f=1MHz  
Collector-to-Emitter Saturation Voltage  
V
I
I
I
I
I
=(--)10mA, I =(--)1mA  
(--)0.5  
CE  
C
C
C
C
C
B
=(--)10μA, I =0A [2SA1016, 2SC2362]  
(--)120  
(--)150  
(--)100  
(--)120  
(--)5  
V
E
Collector-to-Base Breakdown Voltage  
V
(BR)CBO  
=(--)10μA, I =0A [2SA1016K, 2SC2362K]  
V
E
=(--)1mA, R =[2SA1016, 2SC2362]  
BE  
V
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
V
V
(BR)CEO  
=(--)1mA, R =[2SA1016K, 2SC2362K]  
BE  
V
I =(--)10μA, I =0A  
V
(BR)EBO  
E
C
Continued on next page.  
* : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA h as follows :  
FE  
Rank  
F
G
H
h
FE  
160 to 320  
280 to 560  
480 to 960  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.0572-1/5  

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