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2SA1015-O PDF预览

2SA1015-O

更新时间: 2024-11-13 04:25:47
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 85K
描述
PNP Silicon Plastic-Encapsulate Transistor

2SA1015-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):70JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SA1015-O 数据手册

 浏览型号2SA1015-O的Datasheet PDF文件第2页 
2SA1015-O  
2SA1015-Y  
2SA1015-GR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Capable of 0.4Watts of Power Dissipation.  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current 0.15A  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
x
Marking:A1015  
TO-92  
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
50  
50  
---  
---  
---  
---  
Vdc  
Vdc  
(I =0.1mAdc, IB=0)  
C
V(BR)CBO  
Collector-Base Breakdown Voltage  
(I =100uAdc, IE=0)  
C
I
Collector Cutoff Current  
(VCB=50Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
0.1  
0.1  
uAdc  
uAdc  
CBO  
C
IEBO  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
70  
---  
---  
---  
400  
0.3  
---  
(I =2.0mAdc, VCE=6.0Vdc)  
C
VCE(sat)  
VBE(sat)  
VBE  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =10mAdc)  
Vdc  
Vdc  
Vdc  
C
B
D
Base-Emitter Saturation Voltage  
(I =100mAdc, I =10mAdc)  
1.1  
C
B
Base-Emitter Voltage  
(IE=310mAdc)  
1.45  
E
C
B
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(IC=1.0mAdc, VCE=10Vdc, f=30MHz)  
---  
G
80  
MHz  
DIMENSIONS  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
FE (1)  
CLASSIFICATION OF H  
Rank  
Range  
O
70-140  
Y
GR  
200-400  
E
G
120-240  
www.mccsemi.com  
1 of 2  
Revision: 5  
2007/03/01  

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