2SA1015-O
2SA1015-Y
2SA1015-GR
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
•
•
•
•
Capable of 0.4Watts of Power Dissipation.
PNP Silicon
Plastic-Encapsulate
Transistor
Collector-current 0.15A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55OC to +125OC
·
·
x
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:A1015
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
B
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
50
50
---
---
---
---
Vdc
Vdc
(I =0.1mAdc, IB=0)
C
V(BR)CBO
Collector-Base Breakdown Voltage
(I =100uAdc, IE=0)
C
I
Collector Cutoff Current
(VCB=50Vdc, IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
0.1
0.1
uAdc
uAdc
CBO
C
IEBO
ON CHARACTERISTICS
hFE
DC Current Gain
70
---
---
400
0.3
1.1
---
(I =2.0mAdc, VCE=6.0Vdc)
C
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
(I =100mAdc, I =10mAdc)
Vdc
Vdc
C
B
D
Base-Emitter Saturation Voltage
(I =100mAdc, I =10mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
E
C
fT
Transistor Frequency
B
---
G
(IC=1.0mAdc, VCE=10Vdc, f=30MHz)
80
MHz
DIMENSIONS
INCHES
MM
DIM
A
B
C
D
MIN
.170
.170
.550
.010
.130
.096
MAX
.190
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
FE (1)
CLASSIFICATION OF H
Rank
Range
O
70-140
Y
GR
200-400
.190
.590
.020
.160
.104
120-240
E
G
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Revision: C
2011/03/25