2SA1015
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Driver Stage Amplifier Applications
•
•
High voltage and high current: V
= −50 V (min),
= −150 mA (max)
CEO
I
C
Excellent h
linearity: h
: h
= 80 (typ.) at V
= −6 V, I = −150 mA
CE C
FE
FE (2)
(I = −0.1 mA)/h
C
(I = −2 mA) = 0.95 (typ.)
C
FE
FE
•
•
Low noise: NF = 1dB (typ.) (f = 1 kHz)
Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
−5
V
I
−150
−50
mA
mA
mW
°C
°C
C
Base current
I
B
JEDEC
JEITA
TO-92
Collector power dissipation
Junction temperature
Storage temperature range
P
400
C
SC-43
T
j
125
TOSHIBA
2-5F1B
T
stg
−55~125
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
⎯
⎯
⎯
⎯
−0.1
−0.1
μA
μA
CBO
CB
EB
E
I
= −5 V, I = 0
C
EBO
h
FE (1)
(Note)
V
V
= −6 V, I = −2 mA
70
⎯
400
CE
C
DC current gain
h
= −6 V, I = −150 mA
25
⎯
⎯
80
⎯
⎯
80
−0.1
⎯
⎯
−0.3
−1.1
⎯
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
I
I
= −100 mA, I = −10 mA
V
V
CE (sat)
BE (sat)
C
C
B
= −100 mA, I = −10 mA
B
f
V
V
V
V
= −10 V, I = −1 mA
⎯
MHz
pF
Ω
T
CE
CB
CE
CE
C
Collector output capacitance
Base intrinsic resistance
C
= −10 V, I = 0, f = 1 MHz
4
7
ob
bb’
E
r
= −10 V, I = 1 mA, f = 30 MHz
30
⎯
E
= −6 V, I = −0.1 mA, R = 10 kΩ,
C
G
Noise figure
NF
⎯
1.0
10
dB
f = 1 kHz
Note: h
classification O: 70~140, Y: 120~240, GR: 200~400
FE (1)
1
2007-11-01